PART |
Description |
Maker |
MX26C4000BTI-90 MX26C4000BQI-15 MX26C4000BQI-10 MX |
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 120 ns, PDSO32 4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 120 ns, PQCC32 4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 90 ns, PQCC32 4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 90 ns, PDIP32 Switch Actuator; For Use With:18 Series Switches; Accessory Type:Spring Lever Actuator RoHS Compliant: Yes IC DRIVER 1/2BRDG LOW SIDE 16DIP DIODE SCHTTKY 150V 2X30A TO247AD
|
Macronix International Co., Ltd.
|
HY57V161610D HY57V161610DTC-10 HY57V161610DTC-5 HY |
2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50 2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50 SDRAM - 16Mb
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
|
S29AL008D55TFN023 S29AL008D70TFN023 S29AL008D70TFI |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 70 ns, PDSO44 CONNECTOR ACCESSORY 连接器附 CONNECTOR ACCESSORY 512K X 16 FLASH 3V PROM, 90 ns, PDSO48 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 90 ns, PDSO44 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 8兆位 M中的x 8-Bit/512x 16位).0伏的CMOS只引导扇区闪 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 70 ns, PBGA48 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 8兆位1 M中的x 8-Bit/512亩x 16位).0伏的CMOS只引导扇区闪 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 55 ns, PBGA48 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 8兆位 M中的x 8-Bit/512亩x 16位).0伏的CMOS只引导扇区闪 JT 16C 16#16 PIN RECP CAP 0.015UF 50V 80-20% Z5U SMD-0805 TR-7-PL SN-NIBAR SSR OCMOS FET 200MA NO 6-SOIC
|
SPANSION LLC Spansion, Inc. Spansion Inc.
|
GM71V17403C GM71V17403C-5 GM71V17403C-6 GM71V17403 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns 4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM 4Mx4|3.3V|2K|5/6/7|FP/EDO DRAM - 16M x4 EDO Page Mode DRAM 4M X 4 EDO DRAM, 70 ns, PDSO24
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800 |
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28 x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28 2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28 x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28 2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL 2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
|
M12L64322A M12L64322A-6T M12L64322A-7T |
512K x 32 Bit x 4 Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc. ETC
|
A43L1632V-6 A43L1632V-7 A43L1632 |
512K X 32 Bit X 4 Banks Synchronous DRAM
|
AMICC[AMIC Technology]
|
HY57V161610DTC-6I |
2 Banks x 512K x 16 Bit Synchronous DRAM
|
Hynix Semiconductor
|
HY57V16161 |
2 Banks x 512K x 16 Bit Synchronous DRAM
|
HYNIX
|
M52L64322A M52L64322A-6BG M52L64322A-7BG |
512K x 32 Bit x 4 Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
KM416C1204CJ-L5 KM416V1004CJ-L5 KM416C1004CJ-L45 K |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns
|
Samsung Electronic
|